| PART |
Description |
Maker |
| GC4320 GC4321 GC4322 GC4323 |
CONTROL DEVICES High Speed NIP Diodes
|
Microsemi Corporation
|
| EPM5192 EPM5064 EPM5032 EPM5128 EPM5130 EPM5016 |
High-Speed, High-Density MAX 5000 Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| AD8034 AD8033 |
FastFETs?from Analog Devices
Very Low-Cost High-Speed FAST FETOp Amps
|
Analog Devices
|
| GC44101 GC4495 GC4491 GC4494 GC4490 GC4492 GC4493 |
CONTROL DEVICES - HIGH VOLTAGE PIN DIODES
300 V, SILICON, PIN DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| HCPL-901J HCPL-900J HCPL-9031 HCPL-902J HCPL-9030 |
SPECIAL
HCPL-0931 · High Speed Digital Isolator
HCPL-0930 · High Speed Digital Isolator
HCPL-092J · High Speed Digital Isolator
HCPL-091J · High Speed Digital Isolator
HCPL-090J · High Speed Digital Isolator
HCPL-0900 · High Speed Digital Isolator
HCPL-9000 · High Speed Digital Isolator
HCPL-9030 · High Speed Digital Isolator
HCPL-902J · High Speed Digital Isolator
HCPL-9031 · High Speed Digital Isolator
HCPL-900J · High Speed Digital Isolator
HCPL-901J · High Speed Digital Isolator
|
Agilent (Hewlett-Packard)
|
| NTE3017 |
Infrared Emitting Diode High Speed for Remote Control
|
NTE Electronics
|
| HA16150P HA16150T |
High-Speed Current Mode Push-Pull PWM Control IC
|
Renesas Electronics Corporation
|
| EZ55Z3L-ZADJTR EZ55Z3L-ZADJTA EZ55Z3L-Z3.3TA EZ55Z |
THS6032 High Speed Amplifier Evaluation Modules
THS3001 High Speed Amplifier Evaluation Modules
THS6012 High Speed Amplifier Evaluation Modules
THS4042 High Speed Amplifier Evaluation Module
THS6022 High Speed Amplifier Evaluation Modules 积极的固定电压稳压器
THS4061 High Speed Amplifier Evaluation Module 积极的固定电压稳压器
THREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS 三端固定电压调节
THS4012 High Speed Amplifier Evaluation Module 积极的固定电压稳压器
Positive Adjustable Voltage Regulator 积极可调电压稳压
THS4052 High Speed Amplifier Evaluation Module 积极的固定电压稳压器
ADS8383 Evaluation Module 积极可调电压稳压
THS4041 High Speed Amplifier Evaluation Module 积极的固定电压稳压器
|
Semtech, Corp.
Everlight Electronics Co., Ltd.
Taiwan Semiconductor Co., Ltd.
Black Box, Corp.
|
| SRP HA17384HPS/HRP HA17385HPS/HRP HA17385HPS HA173 |
High Speed Current Mode PWM Control IC for Switching Power Supply
High Speed Current Mode PWM Control IC for Switching Power Supply 高速开关电源电流模式PWM控制IC
|
Hitachi Semiconductor
Hitachi,Ltd.
http://
|
| XC6209B33AD XC6212H59AD XC6209 XC6209_1 XC6209A31A |
High Speed LDO Regulator, Low ESR Cap. Compatible, Output ON/OFF Control
|
TOREX[Torex Semiconductor]
|
